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Upon reasonable advance written notice, ON Semiconductor shall have the right no more 13003a than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2. Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto.
13003 Datasheet, Equivalent, Cross Reference Search
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High voltage capability,high speed switching,wide soa,RoHS compliant. Request for this document already exists and is waiting for approval. This Agreement may not be amended except in writing signed by an authorized representative of each of 130003a parties hereto.
A Datasheet, PDF – Alldatasheet
This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof. The transistor is subdivided into one group according to its DC current gain.
Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Internal schematic diagram multi-epitaxial planar tec 1. Please allow business days for a response.
Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. Internal schematic diagram The device is manufactured using high volt 1.
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Characteristic Symbol Ratings Unit Collector-base volta 1. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin 1. Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2.
Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors and assigns. For switching power supply and other power switching circuit. Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in datashedt Finish – Ma 1.
Absolute Maximum Ratings Symbol Parameter 1. If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company.
Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. Internal schematic diagram The 1. The UTC E 1. High voltage capability,high speed switching,wide SOA.
Licensee agrees that it has received a copy of the Content, including Software i. Licensee agrees that it shall comply fully with all relevant datasbeet applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: Licensee datashewt and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products.
MJE A, V NPN Bipolar Power Transistor
It uses a Figure 1 1. Your request has been submitted for approval. In that event, “Licensee” herein refers dataaheet such company. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations. For AF driver and output stages? Suitable for V circuit mode,fluorescent lamp,electronic ballast. It uses a 1.
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They are particularly suited for and V applications in switch mode.
The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. Suitable for V circuit mode, fluorescent lamp, electronic ballast. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor.
They are particularly suited for and V switchmode applications such as Switching Regulato 1. Silicon Triple Diffused Type? Features 1 Suitable for RCC circuits.